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  creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 200 v v rms 24 31 35 42 63 70 105 140 v v dc 35 45 50 60 90 100 150 200 v i f(av) a i rrm a 0.95 1.05 0.92 - 1.02 1.10 0.98 - 0.1 dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309029 version: j13 mbr3035pt thru mbr30200pt taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec to-247ad (to-3p) mechanical data case: to-247ad (to-3p) polarity: as marked mounting torque: 10 in-lbs maximum weight: 6.1 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbr 3035 pt mbr 3045 pt mbr 3050 pt mbr 3060 pt mbr 3090 pt mbr 30100 pt mbr 30150 pt mbr 30200 pt unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 30 peak repetitive forward current (rated v r , square wave, 20khz) i frm 30 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse surge current (note 1) 2 1 maximum instantaneous forward voltage (note 2) i f =15a, t j =25 i f =15a, t j =125 i f =30a, t j =25 i f =30a, t j =125 v f -- 0.73 - - v - 0.75 0.85 0.60 0.65 0.75 0.82 note 1: 2.0 s pulse width, f=1.0khz note 2: pulse test : 300 s pulse width, 1% duty cycle storage temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =125 i r ma 20 10.5 typical thermal resistance 1.4 operating junction temperature range - 55 to +150 15 10 voltage rate of change,(rated v r ) 10,000
part no. part no. mbr3060pt mbr3060pt mbr3060pt (ta=25 unless otherwise noted) document number: ds_d1309029 version: j13 mbr3035pt thru mbr30200pt taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing mbr30xxpt (note 1) prefix "h" c0 suffix "g" to-3p 30 / tube note 1: "xx" defines voltage from 35v (mbr3035pt) to 200v (mbr30200pt) example preferred p/n aec-q101 qualified packing code green compound code description mbr3060pt c0 c0 mbr3060pt c0g c0 g green compound mbr3060pthc0 h c0 aec-q101 qualified ratings and characteristics curves 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 average forward a current (a) case temperature ( ) fig.1 forward current derating curve resistive or inductiveload with heatsink 0 25 50 75 100 125 150 175 200 225 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 reverse leakage current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=125 tj=25 mbr3035pt-3045pt mbr3050pt-30200pt 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg tj=125 mbr3035pt-45pt mbr3050pt-60pt mbr3090pt-200pt tj=25
min max min max a 15.90 16.40 0.626 0.646 b 7.90 8.20 0.311 0.323 c 5.70 6.20 0.224 0.244 d 20.80 21.30 0.819 0.839 e 3.50 4.10 0.138 0.161 f 19.70 20.20 0.776 0.795 g - 4.30 - 0.169 h 2.90 3.40 0.114 0.134 i 1.93 2.18 0.076 0.086 j 2.97 3.22 0.117 0.127 k 1.12 1.22 0.044 0.048 l 5.20 5.70 0.205 0.224 m 4.90 5.16 0.193 0.203 n 2.70 3.00 0.106 0.118 o 0.51 0.76 0.020 0.030 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1309029 version: j13 marking diagram mbr3035pt thru mbr30200pt taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junc tion capacitance per leg f=1.0mhz vsig=50mvp-p mbr3035pt-mbr3045pt mbr3050pt-mbr3060pt mbr3090pt-mbr30200pt 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1309029 version: j13 mbr3035pt thru mbr30200pt taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,


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